Silane-compounds-assisted surface metallizationtechnology of silicon

• Main Authors: Yu-Zhong Lai, 賴育忠
• Other Authors: Chih-Ming Chen
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/7bbewp

碩士 === 國立中興大學 === 化學工程學系所 === 106 === Along with the advance of the high technology, the requirement of wire of IC industry tend to be thin, tiny and lightweight design. The traditional wire process incapable fit the trend of IC industry which demand to handle the high wire density and designed scale into sub-nano scope. Thus, this study is expected to use low-cost, simple process of the all-wet-process as the research theme. Using silicon wafer as the substrate to deposit copper wire with surface metallization technique, and to explore the potential in the nano-process development In this study, we will explore the technology of silicon substrate metallization with silane compound (3-2-(2-aminoethylamino)ethylaminopropyltrimethoxysilane (ETAS) which contains three amine functional groups. Forming the covalent bond by the silane compound and silicon substrate surface conduct dehydration reaction, subsequently, using the amine-based functional groups to adsorb nano-palladium (Polyvinylpyrrolidoe Capped Palladium, PVP-nPd), PVP-nPd is the catalyst of electroless copper. Exploring the interaction between silane compounds and nano-palladium catalyst in the commercial application In the experiment, the effect of the silane compound grafted on the silicon substrate and the bonding structure was identified by water contact angle measurement, X-ray Photoelectron Spectroscopy and Atomic Force Microscope. The efficiency of diffusion barrier was measured by Focus Ionic Beam, X-ray Diffraction and Transmission Electron Microscope after Rapid Annealing Process treatment, and the interface morphology was also observed to detect the presence or absence of copper silicide. In order to confirm that the copper which made by all-wet-process has good adhesion, apply pull-off adhesion tester to quantify the adhesion strength between copper and silicon substrate. Hope that the results of this research have dual functions with both adhesion and diffusion barrier properties, Most of all, it can help the development of integrated circuit industry in the future.