Fabrication of Zinc Oxide superlattice structures by atomic layer deposition
碩士 === 國立中興大學 === 光電工程研究所 === 106 === In this experiment, Atomic Layer Deposition (ALD) is used to form a superlattice structure on the SiO2/Si substrate by forming an ZnO doped Al2O3(AZO) structure with zinc oxide stacked alumina and forming a ZnO doped HfO2 (HZO) film with zinc oxide stacked yttri...
Main Authors: | HAO-REN CHEN, 陳浩仁 |
---|---|
Other Authors: | Tsong-Sheng Lay |
Format: | Others |
Language: | zh-TW |
Published: |
2018
|
Online Access: | http://ndltd.ncl.edu.tw/handle/537w9q |
Similar Items
-
Study on Zinc Oxide Thin-Film Transistors Fabricated by Atomic Layer Deposition
by: Chiang,Cheng-Yu, et al.
Published: (2014) -
The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition
by: Yen-Ting Lin, et al.
Published: (2015) -
Atomic layer deposition zinc oxide devices for transparent electronics
by: Shaw, Andrew
Published: (2018) -
The Optical Properties of Zinc Oxide Grown by Atomic Layer Deposition
by: Mong-Kai Wu, et al.
Published: (2007) -
Atomic layer deposition of alumina and zinc oxide for optoelectronic devices
by: Burgess, Claire Hannah
Published: (2016)