| Summary: | 博士 === 國立成功大學 === 化學工程學系 === 106 === This dissertation mainly consist of two parts. The first part investigates growth of zinc oxide nanowires (ZnO NWs) by hydrothermal method; followed by characterization and application of these ZnO NWs as carrier transport layer between source and drain electrode in a transistor device. Different materials are used for the ZnO NWs nucleation layer which result in different growth conditions of the ZnO NWs. This research also found that low concentration precursor suppressed the number of ZnO NWs and affected its growth orientation, which also significantly improved the device switching characteristics. The ZnO NWs surface can absorb oxygen from the atmosphere which result in impedance change of the ZnO NWs carrier transport channel. The later part of this dissertation discuss about the improvement of transistor characteristics by Joule heating. The ZnO NWs are electrophoretically deposited between the aluminum electrodes. Then, the ZnO NWs were pressed on an elevated temperatures. Lastly, the local Joule heating effect was generated by applying bias voltage on the drain electrode under nitrogen atmosphere and epoxy passivation, which minimized the contact resistance within the device. No temperature rise was observed during the heating process, thereby open a possibility of device fabrication on flexible or plastic substrate.
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