| Summary: | 碩士 === 國立成功大學 === 微電子工程研究所 === 106 === Most of the conventional organic light-emitting diodes used indium tin oxide (ITO) film as an electrode, because the ITO film had high transmission and conductivity. However, ITO film had a roughness surface. The roughness surface morphology of the ITO film was likely to cause problems in the fabrication of the subsequent transport layer or light emitting layer. Therefore, we used RF-Sputter to fabricate indium zinc oxide (IZO) stacked ITO structures instead of traditional electrodes for organic light-emitting diodes (OLEDs) Because IZO film had a smooth surface, stacking IZO on the ITO film could improve the roughness defects of ITO. Then, using poly (9-vinylcarbazole)(PVK) and Bis(3,5-Difluoro-2-(2-pyridyl)phenyl-(2-carboxypyridyl) iridium III(Firpic) to fabricate the light-emitting layers of OLED, and discussing the device characteristics of the relationship between IZO stacked ITO film. Additionally, we used laser interference lithography to fabricate silicon dioxide (SiO2) on the back of the substrate. The difference in refractive index between the glass and air would create light reflection, however the roughness structure could effectively reduce the reflection. Among the different period of the SiO2 roughness structure, the period of 0.75 μm had the minimum average reflection 3.02% at 470~500 nm. The maximum luminous of the OLED with SiO2 roughness structure period for 0.75 um was increased to 336 cd/m2, while the maximum luminous efficiency was increased to 7.76 cd/A.
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