| Summary: | 碩士 === 國立成功大學 === 電機工程學系 === 106 === Nowadays, many countries are committed to the development of emerging technologies such as electric vehicles, intelligent servo systems and renewable energy. Among these technologies, high power density, high efficiency and fast response are the important considerations to develop more advanced power converters. Compared to the Si MOSFET, wide band-gap semicon-ductor power devices have a much better figure of merit (FOM) to show their potentials. This research is devoted to provide parameter analysis and ringing suppression of the cascode Gallium Nitride (GaN) high electron mobility transistor (HEMT). This thesis begins with the characteristic illustration of wide band-gap semiconductor power devices. To point out challenges of the cascade GaN HEMT, parasitic parameters have been analyzed by double pulse testing (DPT) and SIMetrix model. To reduce the parasitic effects, several methods of ringing suppression and printed circuit board (PCB) layout are also proposed. Finally, circuit simulation and experiments are successfully performed to verify the analysis and proposed methods.
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