| Summary: | 碩士 === 國立成功大學 === 電機工程學系 === 106 === In this study, CZTS and CZTSSe films were prepared by 2-Methoxyethanol(EGME) solution as the absorption layer, and SnS, ZnS, Cu0.1Zn0.1SnS self-constituent buffer layer and SnS+ZnS and SnS1ZnS2 mixed self-constituent buffer layer were added respectively. The layer forms a film structure of Mo/Self-constituent buffer layer/CZTS(Se). The self-constituent buffer layer used in this study can effectively improve the crystallinity and adhesion of the thin film. It is confirmed by XRD and Raman that the thin film are CZTS(Se) of kesterite structure, and no secondary phase is found. It was observed in the TEM anaylsis that the CZTSSe thin film with ZnS and Cu0.1Zn0.1SnS buffer layer had no delamination and good crystallinity. In the ESCA bonding analysis, it was observed that the surface of thin film contained a copper-zinc-oxide compound having a different valence from the CZTSSe component. This result indicates that even though the XRD, Raman and TEM analyses indicate that thin film component is CZTSSe, the surface of thin film still have heterogeneous phase. In this part, thin film properties of CZTSSe will be improved by controlling the proportion of precursor solution and annealing conditions.
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