Fabrication of ZnO:Ga Transparent Electrodes with Surface Modifications and these Applications in RRAM Device

• Main Authors: Li wenWang, 王俐文
• Other Authors: Sheng-Yuan Chu
• Format: Others
• Language: en_US
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/wdutc7

碩士 === 國立成功大學 === 電機工程學系 === 106 === Transparent conductive oxides (TCOs) bear more importance as the semiconductor industry develops. TCOs can be used for transparent resistive random access memory (RRAM), photodetectors, and solar cells. In this study, Ga:ZnO (GZO) thin films were fabricated as TCOs due to their non-toxicity and stability. Three different methods were proposed to improve the electrical properties of GZO thin films: (1) hydrogen plasma post-annealing, (2) nitrogen/hydrogen (N2/H2) mixture gas furnace annealing, and (3) using the popular 2D material MoS2 quantum dot films as the buffer layer. We used radio frequency sputtering to deposit the GZO on the thin films. The sheet resistance of GZO thin films reduced under hydrogen plasma treatment and N2/H2 furnace annealing treatment. Film transmittance increased after N2/H2 mixture gas furnace annealing. Comparisons of these treatments will be discussed. MoS2 buffer layer can effectively reduce the sheet resistance of films. The detailed mechanism was also investigated. 　For RRAM applications, the GZO bottom electrodes under N2/H2 post treatment not only improved the RRAM on/off ratio by six orders but also increased the transmittance of the device.