Development of active and passive graphene plasmonic device in Terahertz band

• Main Authors: Lin, Che-Wei, 林哲維
• Other Authors: Liu, Jia-Ming
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/55t7k7

碩士 === 國立交通大學 === 照明與能源光電研究所 === 106 === In this thesis, the electrical properties such as Dirac point, carrier mobility of chemical vapor deposited graphene were investigated. Then we fabricate controllable n-type doping graphene transistors by using doping layers of titanium suboxide (TiOx) thin film, and comparing the results with sunlight illumination to those without sunlight. Besides, we fabricate thinner high-κ dielectric gate oxide which acts as a good insulating layer in our devices. By these methods, we change the Fermi energy of graphene. With the graphene surface plasmonic theory, the graphene plasmonic waveguide would be designed and fabricated by semiconductor manufacturing. Through the theory, we know the relation between Fermi energy and frequency of surface plasmon resonance. Finally, we combine method of tuning Fermi energy of graphene with graphene plasmonic waveguide theory to make tunable graphene devices, which may have great potential for use in the future development of active and passive plasmonic device in Terahertz band.