Aligned Germanium Nanowire/6,13-bis(triisopropylsilylethynyl)pentacene Nanocomposite for Organic Thin Film Transistor
碩士 === 國立交通大學 === 照明與能源光電研究所 === 106 === In this study, germanium nanowires were synthesized by Vapor-Liquid-Solid mechanism and up to 70% of printed nanowires are aligned within ±20° of primary sliding direction by using shear-force assisted contact printing. Three different densities of nanowire n...
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ndltd-TW-106NCTU53990142019-05-16T00:22:51Z http://ndltd.ncl.edu.tw/handle/6m25b9 Aligned Germanium Nanowire/6,13-bis(triisopropylsilylethynyl)pentacene Nanocomposite for Organic Thin Film Transistor 具方向性鍺奈米線-并五苯衍生物之有機薄膜電晶體 Lin, Sheng-Yu 林昇榆 碩士 國立交通大學 照明與能源光電研究所 106 In this study, germanium nanowires were synthesized by Vapor-Liquid-Solid mechanism and up to 70% of printed nanowires are aligned within ±20° of primary sliding direction by using shear-force assisted contact printing. Three different densities of nanowire networks were incorporated with TIPS-Pentacene as nanocomposite-based organic thin-film transistors (Ge/TIPS-PEN OTFTs). Our results show that the mobility of Ge/TIPS-PEN OTFT with high density nanowires was increased about 10 times compared to that of pure TIPS-PEN device (0.024 to 0.248 cm2/Vs). Additionally, we found that the electrical characteristics of Ge/TIPS-PEN OTFTs without oxide shell etching were similar to those of pristine TIPS-PEN OTFTs. For air stability test, however, the mobility degradation rate of nanocomposite Ge/TIPS-PEN transistors is more distinctive than that of pristine TIPS-PEN OTFTs. Hsieh, Chien-Wen 謝建文 2018 學位論文 ; thesis 58 zh-TW |
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碩士 === 國立交通大學 === 照明與能源光電研究所 === 106 === In this study, germanium nanowires were synthesized by Vapor-Liquid-Solid mechanism and up to 70% of printed nanowires are aligned within ±20° of primary sliding direction by using shear-force assisted contact printing. Three different densities of nanowire networks were incorporated with TIPS-Pentacene as nanocomposite-based organic thin-film transistors (Ge/TIPS-PEN OTFTs). Our results show that the mobility of Ge/TIPS-PEN OTFT with high density nanowires was increased about 10 times compared to that of pure TIPS-PEN device (0.024 to 0.248 cm2/Vs). Additionally, we found that the electrical characteristics of Ge/TIPS-PEN OTFTs without oxide shell etching were similar to those of pristine TIPS-PEN OTFTs. For air stability test, however, the mobility degradation rate of nanocomposite Ge/TIPS-PEN transistors is more distinctive than that of pristine TIPS-PEN OTFTs.
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author2 |
Hsieh, Chien-Wen |
author_facet |
Hsieh, Chien-Wen Lin, Sheng-Yu 林昇榆 |
author |
Lin, Sheng-Yu 林昇榆 |
spellingShingle |
Lin, Sheng-Yu 林昇榆 Aligned Germanium Nanowire/6,13-bis(triisopropylsilylethynyl)pentacene Nanocomposite for Organic Thin Film Transistor |
author_sort |
Lin, Sheng-Yu |
title |
Aligned Germanium Nanowire/6,13-bis(triisopropylsilylethynyl)pentacene Nanocomposite for Organic Thin Film Transistor |
title_short |
Aligned Germanium Nanowire/6,13-bis(triisopropylsilylethynyl)pentacene Nanocomposite for Organic Thin Film Transistor |
title_full |
Aligned Germanium Nanowire/6,13-bis(triisopropylsilylethynyl)pentacene Nanocomposite for Organic Thin Film Transistor |
title_fullStr |
Aligned Germanium Nanowire/6,13-bis(triisopropylsilylethynyl)pentacene Nanocomposite for Organic Thin Film Transistor |
title_full_unstemmed |
Aligned Germanium Nanowire/6,13-bis(triisopropylsilylethynyl)pentacene Nanocomposite for Organic Thin Film Transistor |
title_sort |
aligned germanium nanowire/6,13-bis(triisopropylsilylethynyl)pentacene nanocomposite for organic thin film transistor |
publishDate |
2018 |
url |
http://ndltd.ncl.edu.tw/handle/6m25b9 |
work_keys_str_mv |
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