| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 106 === This paper will present the first silicon-based parabolic Sub-THz reflector antenna with
corresponding fabrication processes. The antenna is side fed with an on-chip 340 GHz patch
antenna on a reflector made of stacked micromachined silicon substrates with a
parabolic-shaped Kapton film coated with aluminum on top. The antenna with a size of 18
x18 x4 mm3 and an aperture of ~10mm can be easily integrated with MMIC (Monolithic
Microwave Integrated Circuit) sources, i.e. 40 nm CMOS triple-push oscillator in this case,
and exhibit not only ~12.4 dB directive gain enhancement and 4.34° HPBW (Half Power
BeamWidth) for far field radiation but also an excellent near field focus characteristic with a
28.5 mm depth of field (DOF). In comparison with the prior arts listed, the characteristics of
small form factor, high gain enhancement and minimal HPBW has shown the potential of the
reflector antenna for high-speed data transmission and THz imaging system applications.
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