Mid-IR Photonic Crystal Surface Emitting Laser using W-type quantum wells on InP Substrates
碩士 === 國立交通大學 === 電子研究所 === 106 === In the thesis, we fabricated and characterized mid-IR Photonic Crystal Surface Emitting Lasers (PCSEL) on InP substrates.In order to solve the lattice matching problems and expand the emission wavelength, we used Molecular beam epitaxy to grow the active region of...
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| Format: | Others |
| Language: | zh-TW |
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2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/sm4z8z |
| Summary: | 碩士 === 國立交通大學 === 電子研究所 === 106 === In the thesis, we fabricated and characterized mid-IR Photonic Crystal Surface Emitting Lasers (PCSEL) on InP substrates.In order to solve the lattice matching problems and expand the emission wavelength, we used Molecular beam epitaxy to grow the active region of six stacks of InGaAs/GaAsSb W-type quantum wells. The photonic crystal consisted of air holes etched to the front surface with a square lattice to provide optical feedback for laser operation and light coupling for surface emission.
The mid- infrared photonic crystal surface emitting lasers were obtained and the laser emitted at a wavelength around 2.2μm under optical pumping. The emission spectrum had a narrow peak with an FWHM of 0.2nm and a threshold power density of 1.72kW/cm2.
By adjusting the period of the photonic crystal lattice, we were able to tune the laser wavelength by 60nm. We also studied the laser performance when the lattice period was changed.
Additionally, in order to reduce the threshold power density, we further studied the effects of different filling factors and etched depths of the air holes in the photonic crystal. It is propitious for the future development of the electrically pumped mid-IR PCSELS.
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