Efficiency Improvement of 2.4 GHz SiGe HBT Power Amplifier

• Main Authors: Wang, Kuo-An, 王國安
• Other Authors: Meng, Chin-Chun
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/k837a2

碩士 === 國立交通大學 === 電信工程研究所 === 106 === This thesis consists of two parts, including eliminating the intermodulation distortion to enhance the linearity of a 2.4 GHz dual-mode power amplifier and realizing a Watt-Level high-efficiency 2.45 GHz stacked power amplifier with a fully integrated design. In the first part, a 2.4 GHz dual-mode power amplifier which improves the efficiency at low-power region by the physical-size reduction method using TSMC 0.18-μm SiGe BiCMOS process is presented; moreover, the linearity is enhanced by utilizing a quarter-wave length bias implemented on a PCB FR-4 to eliminate the intermodulation distortion. In the second part, a Watt-Level high-efficiency 2.45 GHz stacked power amplifier is demonstrated using TSMC 0.18-μm SiGe BiCMOS process. The stacked structure is used to increase the optimized output impedance, hence achieving the goals of high-efficiency, high-linearity, and high-integrated level as well.