Numerical Verification for Prediction of Gallium Nitride Thin Film Growth
博士 === 國立中央大學 === 機械工程學系 === 106 === A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. The mechanism m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2017
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| Online Access: | http://ndltd.ncl.edu.tw/handle/sn376n |