Optical and electrical transport properties of molybdenum disulfide films in heterojunction

• Main Authors: Lu,Guan-Ting, 呂冠廷
• Other Authors: Lin, Der-Yuh
• Format: Others
• Language: zh-TW
• Published: 2017
• Online Access: http://ndltd.ncl.edu.tw/handle/u4e9sp

碩士 === 國立彰化師範大學 === 電子工程學系 === 106 === In this research, we primary study the use of Electron gun (E-gun) to coat Molybdenum film on Silicon, Gallium nitride, Silicon dioxide and Zinc oxide substrates. With our self-designed quartz stent in a thermal evaporation process, a quartz tube vacuum case placed in a high temperature furnace, the vulcanization reaction growth into molybdenum disulfide (MoS2) film takes place, with a process temperature of 900 °C and a process time of 1 hour. After the film growth, the effects of molybdenum disulfide films grown on different substrates and the P-N junction between different substrates and molybdenum disulfide were investigated. We observed the diffraction signal of MoS2 using X-ray diffraction (XRD). The two peak positions of the sample were observed by Raman scattering spectroscopy, with the two peaks E12g and A1g at 374 cm-1 and 403 cm-1, respectively. Scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) were used to observe the surface growth of the film and the chemical product as a continuous film of MoS2. Transmission electron microscopy (TEM) showed the image of the position of the P-N junction. The secondary ion mass spectrometer (SIMS) confirmed that the molybdenum film had a complete reaction with sulfur to become molybdenum disulfide. Photoconductivity spectroscopy (PC) showed that the indirect energy gap of the sample at room temperature was about 1.2 eV and the range and response values of the reaction of the sample to light. The above measurement results confirmed that our growth method can be used to grow good quality molybdenum disulfide films. However, the application of sensor components mainly depends on the response to light, if it is good or bad. Current-voltage (I-V), XRD, Raman measurement and a series of experiment related to light detectors provided a useful criterion for comparing the effects of different substrates on the properties of MoS2. The results show that the growth of MoS2 on the zinc oxide substrate, whether the quality of the film or the photoelectric properties of the P-N junction compared to the other 3 substrates, has the best response.