Phase Engineered 1T/2H WSe2/WOx 3D Nanostructures as Highly Sensitive NO Gas Sensors by Plasma-Assisted Selenization Process
碩士 === 國立清華大學 === 材料科學工程學系 === 106 === In this work, we have successfully combined the glancing angle deposition (GLAD) approach with plasma-assisted chemical vapor reduction (PACVR) method to fabricate the nano-structured tungsten diselenide (WSe2) as the reactive layer for gas sensor application....
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ndltd-TW-106NTHU51590122019-05-16T00:08:09Z http://ndltd.ncl.edu.tw/handle/6hbvgu Phase Engineered 1T/2H WSe2/WOx 3D Nanostructures as Highly Sensitive NO Gas Sensors by Plasma-Assisted Selenization Process 電漿輔助硒化製備二硒化鎢/氧化鎢三維奈米結構應用於高靈敏一氧化氮感測器 Lee, Shao-Hsin 李紹馨 碩士 國立清華大學 材料科學工程學系 106 In this work, we have successfully combined the glancing angle deposition (GLAD) approach with plasma-assisted chemical vapor reduction (PACVR) method to fabricate the nano-structured tungsten diselenide (WSe2) as the reactive layer for gas sensor application. The purpose of using GLAD system is to obtain the nanostructures with much larger surface-area-to-volume ratio compared to flat films, thus increasing the capacity for sensing application. Here we choose WSe2 as the sensing material for nitric oxide (NO) gas detection due to its p-type semiconducting property and effective charge transfer with NO molecules. [1] After parameter optimization, our sensor shows the highly sensitive performance with a response over 40% at 60 ppb at room temperature, and a derived limit of detection about 15 ppb. We also demonstrated that the composition of phases in the WSe2 will influence the sensing behavior, revealing the importance of small amount of 1T (metallic) phase existed in the dominant 2H (semiconducting) matrix to enhance the sensing capability, where the phase concentration can be controlled by the synthesis temperature during PACVR process. Additionally, in comparison with conventional chemical vapor deposition (CVD) processes, the assistance of plasma function facilitates the transformation of transition metal dichalcogenides (TMDCs) at lower temperatures, showing the potential for flexible devices fabrication. Chueh, Yu-Lun 闕郁倫 2017 學位論文 ; thesis 51 en_US |
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碩士 === 國立清華大學 === 材料科學工程學系 === 106 === In this work, we have successfully combined the glancing angle deposition (GLAD) approach with plasma-assisted chemical vapor reduction (PACVR) method to fabricate the nano-structured tungsten diselenide (WSe2) as the reactive layer for gas sensor application.
The purpose of using GLAD system is to obtain the nanostructures with much larger surface-area-to-volume ratio compared to flat films, thus increasing the capacity for sensing application. Here we choose WSe2 as the sensing material for nitric oxide (NO) gas detection due to its p-type semiconducting property and effective charge transfer with NO molecules. [1] After parameter optimization, our sensor shows the highly sensitive performance with a response over 40% at 60 ppb at room temperature, and a derived limit of detection about 15 ppb.
We also demonstrated that the composition of phases in the WSe2 will influence the sensing behavior, revealing the importance of small amount of 1T (metallic) phase existed in the dominant 2H (semiconducting) matrix to enhance the sensing capability, where the phase concentration can be controlled by the synthesis temperature during PACVR process.
Additionally, in comparison with conventional chemical vapor deposition (CVD) processes, the assistance of plasma function facilitates the transformation of transition metal dichalcogenides (TMDCs) at lower temperatures, showing the potential for flexible devices fabrication.
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author2 |
Chueh, Yu-Lun |
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Chueh, Yu-Lun Lee, Shao-Hsin 李紹馨 |
author |
Lee, Shao-Hsin 李紹馨 |
spellingShingle |
Lee, Shao-Hsin 李紹馨 Phase Engineered 1T/2H WSe2/WOx 3D Nanostructures as Highly Sensitive NO Gas Sensors by Plasma-Assisted Selenization Process |
author_sort |
Lee, Shao-Hsin |
title |
Phase Engineered 1T/2H WSe2/WOx 3D Nanostructures as Highly Sensitive NO Gas Sensors by Plasma-Assisted Selenization Process |
title_short |
Phase Engineered 1T/2H WSe2/WOx 3D Nanostructures as Highly Sensitive NO Gas Sensors by Plasma-Assisted Selenization Process |
title_full |
Phase Engineered 1T/2H WSe2/WOx 3D Nanostructures as Highly Sensitive NO Gas Sensors by Plasma-Assisted Selenization Process |
title_fullStr |
Phase Engineered 1T/2H WSe2/WOx 3D Nanostructures as Highly Sensitive NO Gas Sensors by Plasma-Assisted Selenization Process |
title_full_unstemmed |
Phase Engineered 1T/2H WSe2/WOx 3D Nanostructures as Highly Sensitive NO Gas Sensors by Plasma-Assisted Selenization Process |
title_sort |
phase engineered 1t/2h wse2/wox 3d nanostructures as highly sensitive no gas sensors by plasma-assisted selenization process |
publishDate |
2017 |
url |
http://ndltd.ncl.edu.tw/handle/6hbvgu |
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