Characteristics of High Quality p-type ZnO Thin Films on GaAs Substrates and Cd1-xMnxTe Thin Films on Silicon Substrates

• Main Authors: LIN, CHING-FEN, 林靜芬
• Other Authors: CHENG, YUNG-CHEN
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/tjmq2t

碩士 === 國立臺南大學 === 材料科學系碩士班 === 106 === This study is divided into two parts. The first part is the study of the effect of furnace annealing and rapid thermal annealing (RTA) temperature on the structure and optical properties of arsenic-doped zinc oxide (ZnO:As) film on GaAs substrates. The results show that the samples with both furnace annealing and rapid thermal annealing have better film quality including reduction of the residual stress of the film and the formation of high p-type conductivity. Although the hole concentration of the sample with RTA 600 oC is as high as 1019 cm-3, the defects such as AsZn-2VZn complex are formed leading to relatively higher roughness and poor optical emission. Furnace annealing 500 oC and rapid thermal annealing 550 oC are superior condition for better quality of p-type ZnO: As thin film. The second part is the study of the effect of crystal growth time and manganese precursor temperature on the cadmium manganese telluride (Cd1-xMnxTe) film grown on silicon (Si) substrates. The results show that higher doping concentration of manganese (Mn) is achieved in Cd1-xMnxTe for crystal growth time 6-hours. Manganese doping can help to reduce defects of Te-Te bond of the Cd1-xMnxTe film. Better crystalline structure, lower surface roughness and larger blue shifts of luminescence wavelength are realized when the precursor temperature of Mn is raised. For the precursor temperature of Mn at 820 °C, the luminescence wavelength can shift to 629 nm and has relatively low defect density of Te-Te bond. Cd1-xMnxTe is a suitable material as an intermediate energy gap material in the applications of Si-based solar cell.