Nanosheet GAA(Gate-All-Around) Transistors with Ferroelectric Negative Capacitance Effect

• Main Authors: Gu, Siang-Sheng, 古翔升
• Other Authors: Lee, Min-Hung
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/96qpux

碩士 === 國立臺灣師範大學 === 光電科技研究所 === 106 === FinFET transistors were used in many 3C products, e.g., iPhoneA9 CPU, GPU and Bitcoin Mining Hardware. Moreover, the improvement of SS(Subthreshold Swing) may reduce driving voltage and power consumption in next-generation technology node. In this work, the super steep subthreshold swing is obtained by NC effect using HfZrO2 for dielectric. The IBM group proposed the Nanosheet GAA FET which is a Fin-like in horizontal. The Si channel were designed a horizontal direction, and solve process difficult of the Fin height in the FinFET process. The application are such as AI, VR, …e.g. This work is used Ferroelectric HfZrO2 as Gate for NS-GAA Transistors. The Lithography process is employed 365nm I-line stepper with self-alignment and cost down.