All-optical Data Switching in the Si-rich SiCx m-ring Waveguide
碩士 === 國立臺灣大學 === 光電工程學研究所 === 106 === Developing the group IV semiconductor material in silicon photonics integrated circuits has obtained a lot of attraction for the high-speed data switching, processing and transmission in recent years. In this thesis, the silicon excessive SiCx based micro-ring...
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ndltd-TW-106NTU051240372019-05-16T01:00:01Z http://ndltd.ncl.edu.tw/handle/55j8xj All-optical Data Switching in the Si-rich SiCx m-ring Waveguide 富矽碳化矽微米環波導之全光調變 Yen-Wei Hsueh 薛硯維 碩士 國立臺灣大學 光電工程學研究所 106 Developing the group IV semiconductor material in silicon photonics integrated circuits has obtained a lot of attraction for the high-speed data switching, processing and transmission in recent years. In this thesis, the silicon excessive SiCx based micro-ring resonator waveguide was simulated, fabricated and analyzed to achieve all-optical intensity modulation wavelength conversion by two-photon absorption (TPA) induced free-carrier absorption (FCA).In Chapter 2, the all-optical cross-wavelength quadrature amplitude modulation orthogonal frequency-division multiplexing (QAM-OFDM) data switching in the silicon rich silicon carbide (Si-rich SiC) micro-ring (m-ring) waveguide is demonstrated for the first time by using the two-photon absorption (TPA) induced free carrier absorption (FCA) process. With enlarging allowable the 4-QAM OFDM data bandwidth to 1.5 GHz, the wavelength-converted probe data can successfully satisfies the FEC criterion with qualified SNR, BER and EVM of 9.49 dB, 1.4×10-3 and 33.5%, respectively, making the all-optical switching data rate approaching 3 Gbit/s. In Chapter 3, the all-optical 8-QAM UFMC pump-to-probe wavelength conversion via TPA induced FCA mechanism in the Si-rich SiC bus waveguide is demonstrated. Under the 1.2-GHz and 2.5-GHz wideband pre-amplification, the converted probe carried with 8-QAM UFMC data can be respectively achieved up to 3.6 and 4.5 Gbps with their SNR/BER of 12.3 dB/2.9x10-3 and 12.2 dB/3.3x10-3, both satisfying the FEC criterion of 12.04 dB/3.8x10-3. In Chapter 4, the high-speed free carrier absorption mechanism in Si-rich SiC bus waveguide is employed to demonstrate the all-optical wavelength-converted switching of multi-band bit-loading QAM-UFMC data at 7.2 Gbps. Pre-amplifying the bit-loading QAM UFMC data at allowable bandwidth of 1.2/1.4 GHz achieves a receiving raw data rate of 5.6/7.2 Gbit/s when performing the pump-to-probe conversion in the Si-rich SiC waveguide by slicing into six/seven bit-loaded sub-bands. In comparison with the typical wideband 8-QAM UFMC data, the average SNR of the bit-loaded 16-64 QAM UFMC data is greatly enhanced by at least 5-6 dB under 2.5 GHz wideband electrical pre-amplification. These observations reveal that the discrete sub-band bit-loading M-QAM UFMC format can greatly improve the data transmission capacity of the TPA-FCA induced wavelength conversion in the Si-rich SiCx bus waveguide, which fully use the finite FCA bandwidth to switch the data at high bit rate in the Si-rich SiC waveguide. Gong-Ru Lin 林恭如 2018 學位論文 ; thesis 78 en_US |
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碩士 === 國立臺灣大學 === 光電工程學研究所 === 106 === Developing the group IV semiconductor material in silicon photonics integrated circuits has obtained a lot of attraction for the high-speed data switching, processing and transmission in recent years. In this thesis, the silicon excessive SiCx based micro-ring resonator waveguide was simulated, fabricated and analyzed to achieve all-optical intensity modulation wavelength conversion by two-photon absorption (TPA) induced free-carrier absorption (FCA).In Chapter 2, the all-optical cross-wavelength quadrature amplitude modulation orthogonal frequency-division multiplexing (QAM-OFDM) data switching in the silicon rich silicon carbide (Si-rich SiC) micro-ring (m-ring) waveguide is demonstrated for the first time by using the two-photon absorption (TPA) induced free carrier absorption (FCA) process. With enlarging allowable the 4-QAM OFDM data bandwidth to 1.5 GHz, the wavelength-converted probe data can successfully satisfies the FEC criterion with qualified SNR, BER and EVM of 9.49 dB, 1.4×10-3 and 33.5%, respectively, making the all-optical switching data rate approaching 3 Gbit/s. In Chapter 3, the all-optical 8-QAM UFMC pump-to-probe wavelength conversion via TPA induced FCA mechanism in the Si-rich SiC bus waveguide is demonstrated. Under the 1.2-GHz and 2.5-GHz wideband pre-amplification, the converted probe carried with 8-QAM UFMC data can be respectively achieved up to 3.6 and 4.5 Gbps with their SNR/BER of 12.3 dB/2.9x10-3 and 12.2 dB/3.3x10-3, both satisfying the FEC criterion of 12.04 dB/3.8x10-3. In Chapter 4, the high-speed free carrier absorption mechanism in Si-rich SiC bus waveguide is employed to demonstrate the all-optical wavelength-converted switching of multi-band bit-loading QAM-UFMC data at 7.2 Gbps. Pre-amplifying the bit-loading QAM UFMC data at allowable bandwidth of 1.2/1.4 GHz achieves a receiving raw data rate of 5.6/7.2 Gbit/s when performing the pump-to-probe conversion in the Si-rich SiC waveguide by slicing into six/seven bit-loaded sub-bands. In comparison with the typical wideband 8-QAM UFMC data, the average SNR of the bit-loaded 16-64 QAM UFMC data is greatly enhanced by at least 5-6 dB under 2.5 GHz wideband electrical pre-amplification. These observations reveal that the discrete sub-band bit-loading M-QAM UFMC format can greatly improve the data transmission capacity of the TPA-FCA induced wavelength conversion in the Si-rich SiCx bus waveguide, which fully use the finite FCA bandwidth to switch the data at high bit rate in the Si-rich SiC waveguide.
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author2 |
Gong-Ru Lin |
author_facet |
Gong-Ru Lin Yen-Wei Hsueh 薛硯維 |
author |
Yen-Wei Hsueh 薛硯維 |
spellingShingle |
Yen-Wei Hsueh 薛硯維 All-optical Data Switching in the Si-rich SiCx m-ring Waveguide |
author_sort |
Yen-Wei Hsueh |
title |
All-optical Data Switching in the Si-rich SiCx m-ring Waveguide |
title_short |
All-optical Data Switching in the Si-rich SiCx m-ring Waveguide |
title_full |
All-optical Data Switching in the Si-rich SiCx m-ring Waveguide |
title_fullStr |
All-optical Data Switching in the Si-rich SiCx m-ring Waveguide |
title_full_unstemmed |
All-optical Data Switching in the Si-rich SiCx m-ring Waveguide |
title_sort |
all-optical data switching in the si-rich sicx m-ring waveguide |
publishDate |
2018 |
url |
http://ndltd.ncl.edu.tw/handle/55j8xj |
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