| Summary: | 碩士 === 國立臺灣大學 === 物理學研究所 === 106 === Heterostructure, the interface between two non-identical materials are widely used efficient strategy to engineer the electronic and optoelectronic devices. Herein, we have designed a triple heterojunction using graphene sandwiched by p- and n-type semiconductors, P3HT and ZnO. Owing to the atomically thin nature of graphene, the electric field generated at the triple interface in thermal equilibrium can penetrate through graphene to interfere the optoelectronic properties of the semiconducting layers. The existence of unique Dirac cone at the junction gives rise several not yet realized properties. The output performance of such heterojunction based phototransistor can be tuned optically, where external photons can be used as a gate to the detection of other photons carrying different energies. In addition to the broad bandwidth of photon detection, we have demonstrated an efficient color sensitivity of the heterostructure. In the viewpoint of robust global demand for novel functional materials and devices, our strategy paves an important step towards the realization of high performance, multifunctional optoelectronic devices.
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