Controllable Growth of High Quality Graphene based on the Effect of Gas Flow Gradient

• Main Authors: Yu-Hung Liang, 梁鈺弘
• Other Authors: Chi-Te Liang
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/ts669r

碩士 === 國立臺灣大學 === 物理學研究所 === 106 === The life quality pursued by human is rising, and the size of electronic products needs to be rapidly minified, so the volume of materials applied in devices has to be adjusted substantially. Graphene, a two-dimensional hexagonal lattice structure composed of sp2-bonded carbon atoms, due to its outstanding mechanical and electrical properties, scientists expect the development of graphene. Among several approaches to fabricate graphene, chemical vapor deposition (CVD) is the most feasible method to synthesize high-quality graphene with large area. Moreover, CVD is a quite stable method to grow graphene, it is an essential help to apply graphene in industry. Other groups researched the mechanism of growing bilayer graphene on Cu pockets, and promote us use the concept of gas flow gradient in graphene growth. We apply gas flow gradient to grow graphene on Cu sheets without manufacturing in pocket-structure. Based on controlling gas flow gradient in the furnace, we can grow graphene with different coverage of multilayer islands. On the other hand, with precisely control gas flow and growth time, we can synthesize single atomic graphene sheet. In electrochemistry experiment, we observe the catalytic ability is enhanced in the presence of graphene, and the effect of graphene edges on graphene islands is more significant. Similarly, we learn the catalytic ability of graphene edges on multilayer graphene islands are better than graphene without edges. With these results, we can apply continuous graphene with edges between layers in industry in order to improve the performance of catalysis.