Fabrication and characterization of high-mobility GeSn n-MOSFET
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === Germanium-tin (GeSn) with a high carrier mobility is a promising channel material for next-generation logic applications. GeSn alloys become direct bandgap as the Sn fraction is higher than 8–11%. The population of electrons in the Γ band will be increased and...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/fc6d2h |