| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === In this dissertation, the studies of tunneling diode with surrounding MIS (p) gate was presented. The back ground of MIS structure, including the previous studies of saturation current, anodization process, and calculation of oxide thickness, was described in Chapter 1. Next, in chapter 2, optical application of photodetector, based on previous biased gate condition, was studied with the modulation of oxide thickness. It was suggested that higher sensitivity was obtained by thicker oxide. In following three chapters, i.e., Chapter 3, Chapter 4, and Chapter5, the discussions of various gate widths of 5, 10, 15, 20 um with low-power device consideration and its applications were studied. In Chapter 3, while adopting ground gate bias, diode current at saturation region increases with gate width for thinner oxide, but decreases for thicker oxide. In addition, for open gate condition in Chapter 4, diode current decreases with gate width only for oxide thickness of 2.5 nm. Diode currents are almost independent of gate width for oxide thickness of 2.1 nm 2.8 nm. Also, the read voltage varies with oxide thickness as gate biased at floating condition. Subsequently, in Chapter 5, for application of advanced transistor, narrow gate helps S.S. to decrease efficiently. Also, narrow gate device illustrates higher sensitivity with thicker oxide. Finally, the conclusion of this dissertation and the suggested future work are given in Chapter 6.
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