Study of MIS(p) Tunneling Diode Structures with Surrounding MIS(P) Gate
碩士 === 國立臺灣大學 === 電子工程學研究所 === 106 === In this dissertation, the studies of tunneling diode with surrounding MIS (p) gate was presented. The back ground of MIS structure, including the previous studies of saturation current, anodization process, and calculation of oxide thickness, was described in C...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/vxb4pn |