Design and Analysis of Millimeter-Wave Power Amplifier

• Main Authors: Wei-Pang Chao, 趙維邦
• Other Authors: 黃天偉
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/2juqh7

碩士 === 國立臺灣大學 === 電信工程學研究所 === 106 === As the increase of the demands of wider bandwidth and faster data rate nowadays in the transmission communication, the 38GHz frequency is regarded as one of the candi-dates of the 5G communication network. This thesis is divided into two parts. In the first part, three broad band 38GHz Power Amplifiers fabricated in 0.15-µm enhancement mode (E-mode) GaAs PHEMT are pre-sented. The power amplifiers are with different output stage matching design and one of the power amplifier is designed with two versions, with and without gate bias and ESD protection circuit. The proposed power amplifiers can achieve OP1dB of 21.7 dBm "±" 2 dB / 22 dBm "±" 2 dB, Psat of 23.6 dBm "±" 0.6 dB / 24 dBm "±" 2 dB with 20.1 "±" 4% / 21.7 "±" 4%PAEmax in the frequency range of 36 to 40 GHz and provides small signal gain of 19.8 dB / 17.6 dB. The second part shows the power amplifier operated at 38 GHz with diode linearizer which is fabricated in 0.15-µm enhance mode (E-mode) GaAs PHEMT process. This proposed PA utilizes a parallel diode to reduce third-order intermodulation for the im-provement of linearity. The proposed power amplifier achieves OP1dB of 22.8 dBm "±" 0.5 dB, Psat of 23.9 dBm "±" 0.5 dB with 22 "±" 6% PAEmax in the frequency range of 36 to 40 GHz and provides small signal gain of 19.3 dB. When linearizer turns on, it achieves linear output power of 15 dBm and reduces IMD3 to -45 dBc with two tone test signals.