| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 106 === Vertically aligned carbon nanotube (CNT) arrays were grown on the silicon wafer, which was used as a template for TiO2 nanostructure growth. The nanostructure was used as a material for building an electrochemical capacitor. CNTs have many special properties such as chemical stability, good conductivity and high aspect ratio. By synthesizing the silicon wafer with mesh before growing the CNTs, the CNTs pattern can be designed to improve the electrolyte contact area of electrode. TiO2 exhibited extremely good pseudo-capacitor characteristics for redox reactions and reversible Faraday reaction. CNTs coated with TiO2 could be used to effectively enhance the electrochemical capacitor characteristic. The process temperature has significant effects on electrode formation. It affects the structural defects, stress, crystallinity of TiO2. We prepared TiO2 by controlling the growth temperatures and the post annealing in a vacuum environment. Using electric double-layer capacitor measurement, the capacitance could reach as high as 723.8 F/g with TiO2 growth temperature of 350℃. From the experimental results, the TiO2/CNT maintained stable electrochemical characteristics. The synthesized TiO2/CNT was suitable for the electrochemical applications.
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