| Summary: | 碩士 === 國立虎尾科技大學 === 電子工程系碩士班 === 106 === This paper describes two different ceramic samples, which are the bulk samples and thin films. The bulk samples have the compostions of (1-x)TiO2-xSrTiO3 ,with different mixing ratios of x=0~0.1 to study the dielectric properties and physical properties. The thin films have the compostions of (1-x)TiO2-xCaTiO3 with x=0.05. The microwave dielectric properties of thin films are analyzed under different gas ratio for sputtering conditions were studied.
The bulk material was prepared using the solid-state reaction method to fabricate samples composing of two materials, titanium dioxide (TiO2) and strontium titanate (SrTiO3), under a fixed firing temperature of 1200°C, and different sintering temperatures of 1250°C and 1350°C. Two groups of samples of different sintering temperatures are measured by a network analyzer to obtain the microwave dielectric properties with cylindrical resonance technology. The Archimedes measurement method is adopted calculate the physical properties. From the measurement results, it can be found that the dielectric properies have a better performance with the group of 1350°C sintering temperature.
A (x=0.1) dielectric constant of 100 and dielectric loss of 1.95×10-3 are obtained at room temperature. The dielectric constant also increases as the doping ratio increased. The Archimedean measurement shows that at x=0.1 the samples with 1350°C sintering temperature have the highest density, and at x=0.01and 1250°C sintering temperature the samples have the lowest density .
From XRD,(X-Ray Diffraction) analysis, the highest peak also happens at x=0.1 and 1350°C. As the doping ratio increased, the diffraction intensity is also increased.
The ceramic material samples of the thin films ware prepared by the reactive radio frequency magnetron sputtering (PVD) method by changing the concentration of argon (Ar) and oxygen (O2) at the doping ratio x=0.05 under 200w sputtering power, 1.1-2.0 torr sputtering pressure, 5 hours sputtering time, and 300°C substrate heating temperature. Samples are measured by the resonant cavity perturbation technique through a network analyzer to analyze the dielectric properties of the film with different gas ratios.
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