Summary: | 碩士 === 南臺科技大學 === 光電工程系 === 106 === In this paper, ZnO, TiO2 films were grown by RF magnetron
sputtering. The results show that the luminescent properties of the films are observed by
scanning electron microscope, transmission electron microscope and
photoluminescence.
First, a layer of ZnO thin film was sputtered on a sapphire substrate using a radio
frequency magnetron sputtering system with a film thickness of 100 nm, 200 nm and
300 nm, followed by a RF magnetron sputtering system on another sapphire substrate
Sputtering on a layer of titanium dioxide, the film thickness of 30 nm, 60 nm and 90 nm,
and then at the same time the gallium oxide film and titanium dioxide film using a high
temperature furnace to carry out thermal annealing process 300 ℃ ~ 700 ℃.
Followed by the use of RF magnetron sputter to prepare titanium dioxide and ZnO
stacks with distributed Bragg reflector, and then using RF magnetron sputter coated
with a layer of TiO2, then using RF magnetron sputter plating a layer of Ta2O5 stack to
prepare the distributed Bragg reflector, and The design Bragg reflection wavelength is
720w nm. and the reflectance of the Bragg structure was measured using a light
absorption spectrometer.
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