| Summary: | 碩士 === 南臺科技大學 === 電子工程系 === 106 === Thermoelectric materials are materials that allow thermal energy to be converted to electrical energy and vice versa. To further expand their development, aside from being used as a thermoelectric power generator, they can also be fabricated into thermoelectric cooling modules. The industrial revolution brought about rapid development that relied on a large number of non-renewable energy sources, causing environmental pollution, which indirectly led to global warming. Therefore, in recent years, more and more attention has been paid to renewable energy. Accordingly, the utilization of thermoelectric materials is one renewable energy application. Bi2Te3 alloys and compounds have a good thermoelectric figure of merit in room temperature and are thermoelectric materials suitable for daily use. In this study, RF magnetron sputtering technology was used on a Bi2Te3 alloy to deposit a Bi2Te3 thermoelectric film on the silicon substrate. Moreover, by changing the parameters of the process, the effect on the Bi2Te3 thermoelectric film was observed. For the microstructure analysis, a field emission scanning electron microscope (FE-SEM) was used to observe the structure of the surface and the cross-section of the film as well as to measure the film thickness. Then, the Hall Effect Analyzer was used to measure the carrier concentration, carrier mobility, and resistivity. Finally, through the Seebeck Coefficient Measurement System, the Seebeck coefficient of the film was measured, then the power factor was calculated. The experimental results show that the RF power retains the best power factor at 45 W at fixed deposition time (40 min), and argon flow rate (30 sccm).
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