Enhance Solar Cell Efficiency with a Combination of Pre-Production Depths of POCL3

• Main Authors: HSIEH, CHENG-LI, 謝正力
• Other Authors: Hsiao, Chin-Sung
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/s9z7ek

碩士 === 亞洲大學 === 光電與通訊學系碩士在職專班 === 106 === This study aims to explore the preset of POCL3. When the process is not yet done, the preset depth and the diffusion depth of the 矽 substrate are combined to achieve the efficiency improvement. In the process of temperature rise, POCL3 is first inserted for diffusion depth combination. Into the lattice, the N-type dopant is deeper and forms a P-N junction. The research conclusions are as follows: First, through the experiment, you can get the preset action to improve the efficiency of the silicon wafer. Second, experiment with various pyramid-sized enamel wafers, which proves that the size of the pyramid affects the efficiency factor.