Effect of silicon-oxide/electrolyte interface potential distribution on surface molecule interactions

• Main Authors: Tsai, Yi-Lin, 蔡宜霖
• Other Authors: 蔡麗珠
• Format: Others
• Language: zh-TW
• Published: 2018
• Online Access: http://ndltd.ncl.edu.tw/handle/xpy64v

碩士 === 國立臺北科技大學 === 分子科學與工程系有機高分子碩士班 === 106 === The field-effect transistor is often used to detect DNA and biomolecule. In order to improve the sensitivity of detection, we applied an external electric field in each layer of the modified molecule to enhance the molecular arrangement and increase the interaction between molecules. We applied various electric field (-0.5V~+0.5) on the surface in each layer of the molecular modification on the silicon wire. The effect of the external electric field on the molecular structures was measured via the change of I-Vg curve before and after modification of the molecules. In the modification of APTES molecules, the displacement of I-Vg was unclear without an electric field; while the applied electric field (±0.3V), the displacement of I-Vg was understandable observed to be about 1.4V. Then, in the detection of the probe molecule (15T ssDNA) and the target molecule (15A ssDNA), the I-Vg curve shift was unclear ; whereas the I-Vg curve altered about 0.8V without/with an electric field, respectively. On the basis of the experiment results observed in this study, by applying an electric field in each layer of the modified molecules may improve the interaction between the layer and the layer molecules and increase the displacement of I-Vg before and after the reaction. In addition, a rapid and highlight detection of molecular specificity and sensitivity selection could be achieved in future research.