Design of A High Linearity Power Amplifiers with Analog Predistortion Circuit for LTE System Applications
碩士 === 國立臺北科技大學 === 電機工程系 === 106 === In recent years, fourth-generation wireless communication technology has promoted the usage of long-term evolution (LTE) frequencies and bandwidths. The increase in users of mobile devices and the Internet of Things has resulted in the excessive accumulation of...
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ndltd-TW-106TIT054410432019-11-28T05:22:40Z http://ndltd.ncl.edu.tw/handle/h4ff4z Design of A High Linearity Power Amplifiers with Analog Predistortion Circuit for LTE System Applications 應用於LTE之自帶類比預失真電路 高線性度功率放大器設計 Kyle lin 林柏成 碩士 國立臺北科技大學 電機工程系 106 In recent years, fourth-generation wireless communication technology has promoted the usage of long-term evolution (LTE) frequencies and bandwidths. The increase in users of mobile devices and the Internet of Things has resulted in the excessive accumulation of Internet data. LTE frequencies and bandwidths are projected to be insufficient to meet future demands, and wireless technologies are expected to develop rapidly. To improve network data throughput, the 2.6-GHz band has also been commonly applied. Currently, femtocells are prevalent in advanced countries because of their advantages such as low cost, high coverage, and high efficiency. However, how to effectively enhance signal coverage and data throughput has become a critical issue. Existing methods are mostly based on power amplifiers that include predistortion functions. This thesis introduces the theory of a technique divided into two components: analog architecture and digital architecture. The digital predistortion architecture is excessively large for integration, thus increasing computational costs. Moreover, compared with digital predistortion, analog predistortion is easier to implement in an integrated circuit. Therefore, this paper proposes a high-linearity power amplifier design for LTE applications. Our aim was to embed an analog predistorter in the designand thus develop a new power amplifier. We conducted simulations by adopting RTC6649EX of Richwave as the benchmark. The simulation results confirmed that analog predistortion circuit could improve the linearity of the amplifier. We implemented the amplifier design including a predistorter by executing the GaAs HBT process of Advanced Wireless Semiconductor Company. The design was used in LTE applications. Herein, we present measurements conducted for comparison. As mentioned, analog predistortion can effectively improve the linearity of power amplifiers, thus enhancing the performance of femtocell systems. 李俊賢 2018 學位論文 ; thesis 74 zh-TW |
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碩士 === 國立臺北科技大學 === 電機工程系 === 106 === In recent years, fourth-generation wireless communication technology has promoted the usage of long-term evolution (LTE) frequencies and bandwidths. The increase in users of mobile devices and the Internet of Things has resulted in the excessive accumulation of Internet data. LTE frequencies and bandwidths are projected to be insufficient to meet future demands, and wireless technologies are expected to develop rapidly. To improve network data throughput, the 2.6-GHz band has also been commonly applied. Currently, femtocells are prevalent in advanced countries because of their advantages such as low cost, high coverage, and high efficiency. However, how to effectively enhance signal coverage and data throughput has become a critical issue.
Existing methods are mostly based on power amplifiers that include predistortion functions. This thesis introduces the theory of a technique divided into two components: analog architecture and digital architecture. The digital predistortion architecture is excessively large for integration, thus increasing computational costs. Moreover, compared with digital predistortion, analog predistortion is easier to implement in an integrated circuit.
Therefore, this paper proposes a high-linearity power amplifier design for LTE applications. Our aim was to embed an analog predistorter in the designand thus develop a new power amplifier. We conducted simulations by adopting RTC6649EX of Richwave as the benchmark. The simulation results confirmed that analog predistortion circuit could improve the linearity of the amplifier. We implemented the amplifier design including a predistorter by executing the GaAs HBT process of Advanced Wireless Semiconductor Company. The design was used in LTE applications. Herein, we present measurements conducted for comparison.
As mentioned, analog predistortion can effectively improve the linearity of power amplifiers, thus enhancing the performance of femtocell systems.
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李俊賢 |
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李俊賢 Kyle lin 林柏成 |
author |
Kyle lin 林柏成 |
spellingShingle |
Kyle lin 林柏成 Design of A High Linearity Power Amplifiers with Analog Predistortion Circuit for LTE System Applications |
author_sort |
Kyle lin |
title |
Design of A High Linearity Power Amplifiers with Analog Predistortion Circuit for LTE System Applications |
title_short |
Design of A High Linearity Power Amplifiers with Analog Predistortion Circuit for LTE System Applications |
title_full |
Design of A High Linearity Power Amplifiers with Analog Predistortion Circuit for LTE System Applications |
title_fullStr |
Design of A High Linearity Power Amplifiers with Analog Predistortion Circuit for LTE System Applications |
title_full_unstemmed |
Design of A High Linearity Power Amplifiers with Analog Predistortion Circuit for LTE System Applications |
title_sort |
design of a high linearity power amplifiers with analog predistortion circuit for lte system applications |
publishDate |
2018 |
url |
http://ndltd.ncl.edu.tw/handle/h4ff4z |
work_keys_str_mv |
AT kylelin designofahighlinearitypoweramplifierswithanalogpredistortioncircuitforltesystemapplications AT línbǎichéng designofahighlinearitypoweramplifierswithanalogpredistortioncircuitforltesystemapplications AT kylelin yīngyòngyúltezhīzìdàilèibǐyùshīzhēndiànlùgāoxiànxìngdùgōnglǜfàngdàqìshèjì AT línbǎichéng yīngyòngyúltezhīzìdàilèibǐyùshīzhēndiànlùgāoxiànxìngdùgōnglǜfàngdàqìshèjì |
_version_ |
1719298012185886720 |