Boosting the Performance of Journaling File system via Exploiting Multi-Write Modes on MLC NVRAM

碩士 === 淡江大學 === 電機工程學系機器人工程碩士班 === 106 === In recent years, Non-volatile random-access memory (NVRAM) is regarded as a great alternative storage medium because of its beneficial features, including byte addressability, non-volatility, and short read/write latency. In addition, multi-level-cell (MLC)...

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Bibliographic Details
Main Authors: Pei-Wen Hsiao, 蕭培文
Other Authors: Hsin-Wen Wei
Format: Others
Language:zh-TW
Published: 2018
Online Access:http://ndltd.ncl.edu.tw/handle/ywthx6

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