Study of Correlation Between Carrier Transport and Resistive Switching of Tin Oxide Resistive Random Access Memory
碩士 === 國立雲林科技大學 === 電子工程系 === 106 === In this study, a non-toxic solvent is used to synthesize the SnOx precursor solution with a sol-gel process. A non-vacuum spin coating process is used to deposit the SnOx film as the active layer of the resistive random access memory (RRAM). The advantages of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2018
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| Online Access: | http://ndltd.ncl.edu.tw/handle/88qg49 |