Epitaxy Optimization of Gallium Arsenide Grown on Silicon Substrate by Metal Organic Chemical Vapor Phase Deposition
碩士 === 中原大學 === 電子工程研究所 === 107 === In this paper, Gallium Arsenide(GaAs) film was grown on Silicon(Si) substrate by Metal-organic Chemical Vapor Deposition(MOCVD). GaAs and Si had 4% lattice mismatch, so there were many defects. Therefore, GaAs film was grown by Two-Step Growth and Thermal Cycle An...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/78s8ar |