Optimization, Characterization and Application of Gex(In0.2Cd0.8)1-xS Photocatalyst

• Main Authors: LAN, RUEI-YUAN, 藍瑞源
• Other Authors: Weng, Yu-Ching
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/6mq8jf

碩士 === 逢甲大學 === 化學工程學系 === 107 === In this study, a third metal element was added to improve the photocatalytic performance In0.2Cd0.8S based photocatalysts. The photocatalyst array of the Mx(In0.2Cd0.8)1-xS (M = Zr, Ge, Sc, Al, Tl, Sn) was screened by SECM. The Ge0.1(In0.2Cd0.8) 0.9S spot has the best photocatalytic activity. The Ge0.1(In0.2Cd0.8)0.9S photoelectrode with an energy gap of 2.5 eV processes a photocurrent value of 1.1 mV/cm2 under UV-Visible light. In the study of doping with and without graphene oxide (GO), the addition of 0.067 wt% GO to In0.2Cd0.8S shows a higher current value than undoped bared electrode, while adding 0.268 wt% GO to Ge0.1(In0.2Cd0.8)0.9S, a even higher current value of 1.4 mA/cm2 occurs with an energy gap of 2.28 eV. The 0.268wt% GO doped Ge0.1(In0.2Cd0.8)0.9S photoelectrode has good photocatalytic activity, and its hydrogen production efficiency can reach 0.2629 ml/hr · cm-2.