| Summary: | 碩士 === 明志科技大學 === 材料工程系碩士班 === 107 === In recent years, the world is investing plenty of manpowers and resources in the development of low-dimensional thermoelectric materials. Zn-Sb alloy films with low cost and the harmless advantage to the environment have been obtained extensive attentions in the application of the medium temperature range, due to its better thermoelectric properties than bulk materials. This study investigated the effects of magnetron sputtering and electron beam evaporation on the microstructure and electrical properties of Zn-Sb alloy films.
In summary, Zn-Sb Alloy Films deposited by electron beam evaporation through ion beam assisted deposition (IBAD). X-ray diffraction results show that during heat treatments, the phase of the films gradually transforms from single zinc phase to Zn-Sb mixed phases (i.e. ZnSb+Sb, Zn4Sb3+ZnSb, or Zn4Sb3+ZnSb+Zn). Furthermore, it is also found that the crystallinity of Zn-Sb Films deposited through IBAD technology is much better than that of the films produced by magnetron sputtering. Carrier concentration of the films rises with increasing argon ion beam current. When the ion beam current was set at 0.2 and 0.4 A, the film’s carrier concentration was 3.1×1019 and 8.9×1020 cm−3 respectively, which falls within the acceptable range for thermoelectric materials. The optimal carrier concentration of Zn-Sb Films with mixed phases of Zn4Sb3+ZnSb can be achieved when the ion beam current is set at 0.2 A. Its best carrier concentration and Seebeck coefficient and Power factor are 3.1×1019 cm−3, and 99.8 μVK−1, and 1×10−3 W/mK2, respectively.
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