| Summary: | 碩士 === 明志科技大學 === 電子工程系碩士班 === 107 === Quantum dots (QDs) have attracted intensive studies in recent years, due to their unique optical properties. Compared to II-VI QDs, all-inorganic perovskite CsPbX3 (X = Cl, Br, I) QDs exhibit outstanding optical properties, such as higher stability, narrow band emissions, tunable color properties and high device efficiency.
In this thesis, CsPb(Br1-xIx)3 perovskite QD with different compositions (x = 0, 0.33, 0.5, 0.67, and 1) were prepared and the temperature-dependent photoluminescence (PL) were carried out in the temperature range from 10 to 300 K. At 10K, the PL emission peaks locate in the wavelength range from 505 to 675 nm as x increases from 0 to 1. To investigate the thermal behaviors of peak energy, full width at half maximum, and intensity of the PL spectra measured from our samples, the carrier emission mechanism, electron-phonon scattering, electron-phonon interaction and thermal expansion effect on the band-gap are discussed. The analysis can serve as a reference for designing perovskite-based optoelectronic devices.
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