Effects of PtMn thickness on microstructural and magnetic properties of [Co/Ni]2/PtMn thin films
碩士 === 國立中興大學 === 材料科學與工程學系所 === 107 === Ferromagnetic / antiferromagnetic structures have been extensively applied in spin valve device, In this study, the Ag[Co/Ni]2/PtMn multilayer thin films were deposited on a SiO2 substrate by using a dual ion sputtering system, followed by rapid annealing pro...
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ndltd-TW-107NCHU51590242019-11-30T06:09:35Z http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22107NCHU5159024%22.&searchmode=basic Effects of PtMn thickness on microstructural and magnetic properties of [Co/Ni]2/PtMn thin films 鉑錳厚度效應對[鈷/鎳]2/鉑錳薄膜微結構與磁性之影響 Yu-Ting Su 蘇煜庭 碩士 國立中興大學 材料科學與工程學系所 107 Ferromagnetic / antiferromagnetic structures have been extensively applied in spin valve device, In this study, the Ag[Co/Ni]2/PtMn multilayer thin films were deposited on a SiO2 substrate by using a dual ion sputtering system, followed by rapid annealing process. By controling the thickness of PtMn, the influences of the microstructure and magnetic properties of the Ag[Co/Ni]2/PtMn multilayer thin films were investigated. The XRD results showed the polycrystalline face-centered cubic PtMn (a=3.90Å), Co (a=3.56Å), Ni (a=3.56Å) phase in as-deposited [Co/Ni]2/PtMn multilayer thin films. After annealing, the PtMn peak shifted by 30 degree; it showed that the PtMn films might be ordered. The FETEM results indicated that Co and Ni diffused, that the thickness of Co and Ni increased, and that the interface between Co and Ni became unobvious. The atomic ratio of Pt and Mn was 73:27and 75:25; the PtMn layer might be the L10 structure. The ESCA results revealed that the oxygen diffused into the inner area, and that Co was oxidized. The VSM findings revealed that the Hc was nearly zero after annealing, and there is no exchange bias. Ko-Wei Lin 林克偉 2019 學位論文 ; thesis 87 zh-TW |
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碩士 === 國立中興大學 === 材料科學與工程學系所 === 107 === Ferromagnetic / antiferromagnetic structures have been extensively applied in spin valve device, In this study, the Ag[Co/Ni]2/PtMn multilayer thin films were deposited on a SiO2 substrate by using a dual ion sputtering system, followed by rapid annealing process. By controling the thickness of PtMn, the influences of the microstructure and magnetic properties of the Ag[Co/Ni]2/PtMn multilayer thin films were investigated.
The XRD results showed the polycrystalline face-centered cubic PtMn (a=3.90Å), Co (a=3.56Å), Ni (a=3.56Å) phase in as-deposited [Co/Ni]2/PtMn multilayer thin films. After annealing, the PtMn peak shifted by 30 degree; it showed that the PtMn films might be ordered. The FETEM results indicated that Co and Ni diffused, that the thickness of Co and Ni increased, and that the interface between Co and Ni became unobvious. The atomic ratio of Pt and Mn was 73:27and 75:25; the PtMn layer might be the L10 structure. The ESCA results revealed that the oxygen diffused into the inner area, and that Co was oxidized. The VSM findings revealed that the Hc was nearly zero after annealing, and there is no exchange bias.
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Ko-Wei Lin |
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Ko-Wei Lin Yu-Ting Su 蘇煜庭 |
author |
Yu-Ting Su 蘇煜庭 |
spellingShingle |
Yu-Ting Su 蘇煜庭 Effects of PtMn thickness on microstructural and magnetic properties of [Co/Ni]2/PtMn thin films |
author_sort |
Yu-Ting Su |
title |
Effects of PtMn thickness on microstructural and magnetic properties of [Co/Ni]2/PtMn thin films |
title_short |
Effects of PtMn thickness on microstructural and magnetic properties of [Co/Ni]2/PtMn thin films |
title_full |
Effects of PtMn thickness on microstructural and magnetic properties of [Co/Ni]2/PtMn thin films |
title_fullStr |
Effects of PtMn thickness on microstructural and magnetic properties of [Co/Ni]2/PtMn thin films |
title_full_unstemmed |
Effects of PtMn thickness on microstructural and magnetic properties of [Co/Ni]2/PtMn thin films |
title_sort |
effects of ptmn thickness on microstructural and magnetic properties of [co/ni]2/ptmn thin films |
publishDate |
2019 |
url |
http://ndltd.ncl.edu.tw/cgi-bin/gs32/gsweb.cgi/login?o=dnclcdr&s=id=%22107NCHU5159024%22.&searchmode=basic |
work_keys_str_mv |
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