AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistors with Atomic Layer Deposited HfAlO Gate Dielectric and Nitrogen Plasma Treatment
碩士 === 國立成功大學 === 奈米積體電路工程碩士學位學程 === 107 === AlGaN/GaN high-electron-mobility transistors (HEMTs) are considered to be a dominant candidate for post-Si next generation power applications due to their impressive performance, such as high saturation electron velocity, high breakdown electric field and...
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| Format: | Others |
| Language: | en_US |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/m3be56 |