Structure and Raman Spectra Analysis of 2D-Layered Gallium Selenide Grown by Molecular Beam Epitaxy
碩士 === 國立交通大學 === 電子物理系所 === 107 === Two-dimensional material gallium selenide (GaSe) films were grown on sapphire, gallium nitride and gallium arsenide substrates by molecular beam epitaxy. The optical properties of GaSe films were analyzed by the Raman spectroscopy. The Effects of growth condition...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/pgzc76 |