SCREW-DISLOCATION-DRIVEN GROWTH MODE AND OPTICAL PROPERTIES OF TWO-DIMENDIONAL GALLIUM SELENIDE ON GALLIUM ARSENIDE (001) BY MOLECULAR BEAM EPITAXY

碩士 === 國立交通大學 === 電子物理系所 === 107 === Regardless of the dissimilarity in their crystal symmetry, the two-dimensional GaSe of different structure phases grown on GaAs(001) substrates by molecular beam epitaxy reveal a screw-dislocation-driven growth mechanism. Attributing to this mechanism, the spiral...

Full description

Bibliographic Details
Main Authors: NHU QUYNH DIEP, 葉如瓊
Other Authors: Chou, Wu-Ching
Format: Others
Language:en_US
Published: 2019
Online Access:http://ndltd.ncl.edu.tw/handle/9x626m

Similar Items