| Summary: | 碩士 === 國立中央大學 === 化學工程與材料工程學系 === 107 === In this study, we based on the nanosphere lithography and one-step Au-assisted chemical etching process to fabricate single-sidde and double-sided vertically-aligned Si nanocone arrays on p-type (001) Si substrates. In order to enhance the near-infrared absorption, Ni thin film was deposited on the sidewall of the Si nanocone and followed by silicide process. The TEM and SAED analysis indicated that the formation of silicide phase is single-crystalline NiSi_2. UV-Vis-IR spectroscopic measurements showed that Ni thin film can dramatically improve the near-infrared absorption. If Ni thin film become to NiSi_2 thin film by silicide process, it showed the higher absorptance than Ni thin film, which have promising applications in near-infrared photodetector. The produced Ni or NiSi_2/Si nanocone heterostructure exhibited rectification property by Schottky contact and generated photocurrent under 940 nm illumination at zero bias voltage. The obtained results presented a novel structure of Si-base near-infrared photodetector. It has high light trapping ability, fast response and operation in zero bias. This work offer a relative cheap and fast process compared with other Si-base near-infrared photodetectors.
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