Process Innovation and Module Development of Metal Oxide Thermoelectric Materials

• Main Authors: Jen-Che Hsiao, 蕭仁澤
• Other Authors: Cheng-Lun Hsin
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/r37kn7

碩士 === 國立中央大學 === 電機工程學系 === 107 === Thermoelectric (TE) materials are promising candidates for many applications, including thermopiles, thermal sensors, and TE cooler for laser diodes. The performance of a TE device is characterized by the figure of merit (ZT). Oxide semiconductors are regarded as the potential candidates for high-temperature TE applications due to thermal and chemical stability in ambient condition at high temperature. Theoretical calculations and experimental results suggest that ZT can be enhanced in nanostructured materials. It has been reported that In_2 O_3-based ceramics are with high power factors, and the ZT value of In_2 O_3-based ceramics can be effectively improved by reducing the thermal conductivity. In this work, the TE properties of In_2 O_3 doped with Zn and CeO_2 have been investigated. The powders composition were designed as In_1.92 Ce_0.08 O_3 and In1.96Zn0.04O3. These thermoelectric materials were employed to fabricate a thermoelectric module for power generation. In the future work, an enhanced ZT value and contact material are needed for high-temperature TE modules.