Finding internal vector from the Taylor series in tetrahadron element for 3D semiconductor device simulation

• Main Authors: Yi-Ying Li, 李怡瑩
• Other Authors: 蔡曜聰
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/k4tukg

碩士 === 國立中央大學 === 電機工程學系 === 107 === In this thesis, we develop a tetrahedron element module by using the Taylor series and use it to simulate 3D semiconductor device. In order to enable this module to be applied to arbitrary tetrahedron, we choose barycenter method to develop the module. According to our analysis, after comparing with other methods, we find that the Taylor series can overcome the problem in the past, so we choose the Taylor series to find the internal electric field vector. After completing the module, set the coordinates and potentials of the tetrahedron, and verify the electric field, the electron current density, and the hole current density. Then, the five tetrahedrons are combined into a cube resistor, and compare the simulated value with the theoretical value to confirm the accuracy of the module development. Finally, try to find the error when connecting multiple cube resistors in two different ways and discuss the reason.