Finding internal vector from the Taylor series in tetrahadron element for 3D semiconductor device simulation
碩士 === 國立中央大學 === 電機工程學系 === 107 === In this thesis, we develop a tetrahedron element module by using the Taylor series and use it to simulate 3D semiconductor device. In order to enable this module to be applied to arbitrary tetrahedron, we choose barycenter method to develop the module. According...
Main Authors: | Yi-Ying Li, 李怡瑩 |
---|---|
Other Authors: | 蔡曜聰 |
Format: | Others |
Language: | zh-TW |
Published: |
2019
|
Online Access: | http://ndltd.ncl.edu.tw/handle/k4tukg |
Similar Items
-
Finding internal vector from the Taylor series in arbitrary triangle element for 2D semiconductor device simulation
by: Hui-Yu Chen, et al.
Published: (2019) -
Finding internal vector from the edge vector in arbitrary tetrehedron element for 3D semiconductor Device Simulation
by: Chiu-Wei Hao, et al.
Published: (2017) -
Finding internal vector from the edge vector in obtuse triangle element for 2D Semiconductor Device Simulation
by: Wei-ting Shen, et al.
Published: (2016) -
Finding internal vector from the axis method in arbitrary triangle element for 2-D semiconductor device simulation
by: Tzu-Wei Huang, et al.
Published: (2018) -
Finding the internal vector from the plane equation in obtuse triangle element for 2D Semiconductor device simulation
by: Jyun-Kai Hsu, et al.
Published: (2016)