Strain analysis on semipolar nanopyramidal InGaN quantum wells grown on (100) Si substrates
碩士 === 國立中央大學 === 光電科學與工程學系 === 107 === In this study, the effect of lattice strain before and after substrate transfer on the optoelectrionic properties of nanostructured InGaN quantum wells (QWs) structures was investigated. The nanostructure QWs were grown on (100) Si substrates by metal-organic...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2019
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| Online Access: | http://ndltd.ncl.edu.tw/handle/8mmy98 |