Growth and characterization of SnS2(1-x)Se2x alloys

• Main Authors: Tsai,Chi-Feng, 蔡其鋒
• Other Authors: Lin,Der-Yuh
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/wx8j73

碩士 === 國立彰化師範大學 === 電子工程學系 === 107 === In this study, SnS2(1-x)Se2x alloys layered crystals were grown by chemical vapor transport （CVT） method. The crystal structure characterization has been substantiated by X-ray diffraction （XRD） and high resolution transmission electron microscope （TEM） technologies. From each sample’s XRD pattern, the peaks corresponds to （001）, （002）, （003）, （004）, and （005） which were found and used to determine the lattice constants. The band-gap energies modulated from 2.28 eV （SnS2） to 1.23 eV （SnSe2） with the increasing content of Se, which were verified by piezoreflectance spectroscopies （PzR） spectra and absorption spectra. By PzR spectra and absorption spectra, the empirical relation between bandgap energies and composition ratio, according to the extended Vegard’s Law, has been predicted; accorded with a bowing parameter b of 0.56 eV and 0.54 eV, respectively. Keywords: SnS2, SnSe2, piezoreflectance spectroscopies （PzR）, absorption, XRD.