The Investigation of Rubrene Organic Thin Film Transistor

• Main Authors: Fan,Kung-Chih, 范剛誌
• Other Authors: Wang,Yu-Wu
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/2796z6

碩士 === 國立彰化師範大學 === 光電科技研究所 === 107 === This thesis mainly discusses the use of organic small molecule polymer-rubrene to make p-type organic thin film transistor. Since the rubrene film is amorphous after evaporation, it needs to give some energy to let it be crystallization. The fluorene film produces a crystalline phase, so this paper successfully produced a rubrene film transistor element by using a four-stage annealing method under a nitrogen atmosphere. The first part mainly finds the way of multi-four-stage annealing, successfully produces a stable rubrene thin film transistor component, and uses AFM to observe the surface difference of the film before and after annealing, and finds the fourth stage of the finished rubrene. The surface of the film has a large change in morphology, and then the annealing temperature and the change of the Buffer layer are tried, and the current-voltage characteristics are measured to calculate the carrier mobility (μ), the On/Off ratio, and the threshold voltage (VTH). And the electrical parameter value of the subthreshold swing (SS). The second part is to explore the effect of temperature effect on the Rubrene thin film transistor. It can be known from experiments that the higher the ambient temperature, the higher the current of the rubrene film transistor component, which can be explained by trap binding. When the temperature is increased, the trap binding energy becomes smaller, so the carrier can pass more easily, so the carrier mobility is also increased.