| Summary: | 碩士 === 國立彰化師範大學 === 光電科技研究所 === 107 === Abstract
In this experiment, a sol-gel method was used to fabricate a tin dioxide film, and the influence and mechanism of the film on different annealing conditions were investigated. The surface morphology and crystal of the different annealing parameters of the tin dioxide film were analyzed by physical analysis instruments such as AFM and XRD.
We successfully produced tin dioxide thin film crystals at a concentration of 0.05 M and 450 °C for 90 min to further investigate the electrical properties of the tin dioxide thin film transistor, and observe the electrical characteristics and the number of days of placement by placing it in the atmosphere. The stability of the tin dioxide film was tested by changing the length of the channel, measuring temperature, measuring light intensity.
The electron binding energy of tin dioxide is less than the electron affinity of oxygen molecules. As the number of days of implantation increases, the open current of the tin dioxide film decreases gradually, which causes the components to deteriorate. It is also found that the trap of tin dioxide film increases with the increase of the measured temperature. The binding energy will gradually increase, so the on-current is gradually decreased, and the components are also deteriorated. Finally, the light-sensing characteristics of the tin oxide film are confirmed by the illumination measurement.
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