The growth of boron nitride by Plasma-Assisted Molecular Beam Epitaxy

• Main Authors: Wei-Cyuan Huang, 黃偉銓
• Other Authors: Ing-Song Yu
• Format: Others
• Language: zh-TW
• Published: 2019
• Online Access: http://ndltd.ncl.edu.tw/handle/53kmsy

碩士 === 國立東華大學 === 材料科學與工程學系 === 107 === In this study, we grow the boron nitride by Plasma-Assisted Molecular Beam Epitaxy (PA-MBE) to find the substrates suitable for boron nitride growth and better growth conditions. The report is divided into two parts. The first part is to grow boron nitride through the easy-to-obtain sapphire substrate, and the second part is to use nickel-plated substrate (Ni/SiO2/Si). In the first part, there are two processes for growing boron nitride. One is to open boron cell and N-plasma source at the same time. Another is to open boron cell and then open N-plasma source via droplet epitaxy. In the second part, there are three series. The first series is different substrate temperature, the second series is to change the temperature of boron cell, and the third series is to compare different process. All sample were observed by Reflective High Energy Electron Diffraction, then analyzed by Raman and X-ray Photoelectron Spectroscopy, and the morphology was observed by Field-Emission Scanning Electron Microscopy and Atomic Force Microscopy. This study found better boron nitride formation by droplet epitaxy. When the substrate temperature increases or the boron source temperature increases, the crystallinity of boron nitride can be effectively increased.